| 摘要 |
PROBLEM TO BE SOLVED: To prevent damages on a driver IC caused by a short circuit current when the short circuit current flows in an insulated gate device driven by the driver IC.SOLUTION: A power semiconductor module comprises: an insulated gate device 101; a diode chip 102; and a chip capacitor 107 including an electrode 106 and an electrode 108. A collector of the insulated gate device 101 and a cathode of the diode chip 102 are electrically connected. An output electrode 3 of a driver IC chip 0 and the electrode 106 are connected with a gate electrode 105 of the insulated gate device 101 by wires 121, 504. A ground electrode 2 of the driver IC chip 0 and the electrode 108 are connected with an emitter electrode 103 of the insulated gate device 101 by wires 122, 506. The emitter electrode 103 and an anode electrode 104 of the diode chip 102 are connected by a wire 501. The anode electrode 104 is connected with a ground terminal 401 via a wire 502 and the like. |
