发明名称 |
METHOD OF PREPARING CAST SILICON BY DIRECTIONAL SOLIDIFICATION |
摘要 |
<p>A method of preparing a cast silicon crystalline ingot is provided. The method comprises charging a silicon spacer to the bottom surface of the crucible; arranging a monocrystalline silicon seed crystal on the silicon spacer such that no surface of the monocrystalline silicon material is in contact with the bottom surface of the crucible; charging polycrystalline silicon feedstock to the crucible; and applying heat through at least one of the opening and the at least one sidewall in order to form a partially melted charge of silicon in the crucible. The cast silicon crystalline ingot has no transverse dimension less than about five centimeters, and the cast silicon crystalline ingot has a dislocation density of less than 1000 dislocations/cm2. Wafers sliced from the cast silicon crystalline ingot have solar cell efficiency of at least 17.5% and light induced degradation no greater than 0.2%.</p> |
申请公布号 |
WO2013112105(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
WO2013SG00034 |
申请日期 |
2013.01.28 |
申请人 |
MEMC SINGAPORE PTE, LTD. |
发明人 |
CHEN, JIHONG;DESHPANDE, ADITYA |
分类号 |
C03B11/00;C30B11/14;C30B28/06;C30B29/06 |
主分类号 |
C03B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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