发明名称 |
METHOD FOR PRODUCING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL |
摘要 |
A single crystal of semiconductor material is produced by a method of melting semiconductor material granules by means of a first induction heating coil on a dish with a run-off tube consisting of the semiconductor material, forming a melt of molten granules which extends from the run-off tube in the form of a melt neck and a melt waist to a phase boundary, delivering heat to the melt by means of a second induction heating coil which has an opening through which the melt neck passes, crystallizing the melt at the phase boundary, and delivering a cooling gas to the run-off tube and to the melt neck in order to control the axial position of an interface between the run-off tube and the melt neck.
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申请公布号 |
US2013192518(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201313799288 |
申请日期 |
2013.03.13 |
申请人 |
SILTRONIC AG;SILTRONIC AG |
发明人 |
VON AMMON WILFRIED;ALTMANNSHOFER LUDWIG;RIEMANN HELGE;FISCHER JOERG |
分类号 |
C30B11/00;C30B11/02;C30B11/10 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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