发明名称 |
MEMORY ARRAYS AND METHODS OF FORMING SAME |
摘要 |
Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a first conductive material having a looped feature using a self-aligning multiple patterning technique, and forming a first sealing material over the looped feature. A first chop mask material is formed over the first sealing material. The looped feature and the first sealing material are removed outside the first chop mask material.
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申请公布号 |
US2013193398(A1) |
申请公布日期 |
2013.08.01 |
申请号 |
US201213358882 |
申请日期 |
2012.01.26 |
申请人 |
PELLIZZER FABIO;RIGANO ANTONINO;MICRON TECHNOLOGY, INC. |
发明人 |
PELLIZZER FABIO;RIGANO ANTONINO |
分类号 |
H01L47/00;H01L21/02 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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