发明名称 ELECTRODE FOR ELECTRIC DEVICE, MANUFACTURING METHOD THEREFOR, ELECTRODE STRUCTURE FOR ELECTRIC DEVICE AND ELECTRIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an electrode for electric device and a manufacturing method therefor capable of reducing increase in thickness and resistance, and to provide an electric device in which decrease in capacity maintenance rate, increase in DC resistance and increase in thickness can be reduced.SOLUTION: The electrode for electric device contains at least an electrode active material, and polyvinylidene fluoride. Peak intensity of Raman shift measured by Raman spectroscopy for electric device satisfies the relationship of formula (1) :V2/(V1+V2)≥0.55 (In the formula (1), V1 indicates the integral value of peak intensity of Raman shift peak band (3000 cm-2000 cm) of low crystalline polyvinylidene fluoride in the electrode, V2 indicates the integral value of peak intensity of Raman shift peak band (2000 cm-1000 cm) of high crystalline polyvinylidene fluoride in the electrode).
申请公布号 JP2013149408(A) 申请公布日期 2013.08.01
申请号 JP20120007673 申请日期 2012.01.18
申请人 NISSAN MOTOR CO LTD 发明人 YAMAMOTO SHINJI;TAKEUCHI KAZUFUMI
分类号 H01M4/62;H01M4/13;H01M4/139;H01M10/0566 主分类号 H01M4/62
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