| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance epitaxial wafer for a light-emitting element which can obtain more chips from a single wafer.SOLUTION: In an epitaxial wafer 1 for a light-emitting element which comprises a III-V semiconductor layers 2 each including at least an n-type clad layer 5, an active layer 7, a first p-type clad layer 9, a second p-type clad layer 11 and a contact layer 13, which are stacked on an n-type substrate 100, oxygen at an average concentration of 3.1×10cmand under is mixed in an interface between the n-type substrate 100 and the III-V semiconductor layer 2 as an incidental impurity. |
