METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which cavities for an epitaxial source having a source projection part and for an epitaxial drain having a drain projection part can be formed through plasma etching.SOLUTION: A method of manufacturing a semiconductor device that forms an epitaxial source and an epitaxial drain in silicon includes: a main etching step of forming cavities for the epitaxial source and for the epitaxial drain in the silicon through the plasma etching; and a protection film forming step of forming protection films at the cavities formed in the main etching step through the plasma etching.