HALL ELEMENT AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a hall element capable of suppressing fluctuation of a depletion layer width depending on an input voltage without increasing consumption power and without affecting other mixedly mounted elements.SOLUTION: The hall element is formed which comprises: a first well layer 106 formed in a substrate 101 and injected with n-type impurities whose polarity is different from that of p-type impurities in the substrate 101; and a second well layer 107 formed outside of the first well layer 106 and injected with p-type impurities of the same polarity as that of the impurities in the first well layer 106 at a concentration lower than that in the first well layer 106.