| 摘要 |
PROBLEM TO BE SOLVED: To improve a bond strength furthermore between a semiconductor element and a base substrate in a semiconductor device.SOLUTION: A manufacturing method of a semiconductor device in which a first silver layer 530 of a base substrate including a base plate 510 and the first silver layer 530 which is arranged on a surface of the base plate, and a second silver layer 140 of a semiconductor element 100 including the second silver layer 140 on a surface are bonded, comprises: a process of arranging a mold having a flat surface on a surface having irregularities of the silver layer which is arranged on the surface of the base plate such that the flat surface of the mold contacts the surface of the silver layer, and applying the pressure to the mold to planarize the surface having the irregularities of the silver layer thereby to obtain the first silver layer having center line average roughness (Ra) of 0.01 μm-0.7 μm; a process of applying temperatures of the semiconductor element and the base substrate, in which the first silver layer and the second silver layer are arranged in contact with each other, to 150°C-400°C thereby to bond the first silver layer and the second silver layer. |
