High mobility III-V semiconductor field effect transistors

摘要

A wide band gap semiconductor buffer layer is incorporated between the channel and an insulating support layer. The conduction band offset of the buffer layer with the channel layer is sufficiently large to confine electron carriers within the channel. The buffer layer also reduces the presence of interface traps, which cause degradation of charge carriers in the channel, caused by the presence of the insulating material. The conduction band offset between the channel layer and the wide bandgap material is between 0.05 eV and 0.8 eV. The channel layer can be comprised of InGaAs or InGaSb with varying compositions of indium and gallium. The wide bandgap material can be comprised of InAlAs AlGaAs or InGaP with varying compositions of indium, aluminium or gallium. The wide bandgap material may comprise an embedded silicon delta-doped layer which provides electrons to the channel layer.