发明名称 Photomask blank, process for production of photomask, and chromium-containing material film
摘要 In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400°C or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.
申请公布号 IL226214(D0) 申请公布日期 2013.07.31
申请号 IL20130226214 申请日期 2013.05.07
申请人 SHIN-ETSU CHEMICAL CO.LTD;YOSHIKAWA HIROKI;FUKAYA SOUICHI;INAZUKI YUKIO;YAMAMOTO TSUNEO;NAKAGAWA HIDEO 发明人
分类号 G03F 主分类号 G03F
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