| 摘要 |
Provided are a substrate processing system with an improved structure which can prevent a damage from occurring in a lower layer and efficiently remove both etching byproducts and fumes, and a substrate processing method using the same. The substrate processing system includes a wet cleaning module configured to supply a cleaning solutionto a substrate to clean a surface of the substrate and dry the cleaned substrate, and a dry cleaning module configured to spray a cleaning gas containing HF gas to the substrate to etch a silicon oxide layer formed on the substrate. |
