发明名称 |
Film forming apparatus and film-forming method |
摘要 |
A film forming apparatus and a film forming method for suppressing a drop in the film forming speed caused by-product gas are provided. A film forming apparatus for forming a film on a wafer includes a chamber in which the wafer is located; a gas introducing member configured to introduce raw material gas into the chamber, in which the raw material gas turning into by-product gas and a substance which adheres to the surface of the wafer by reacting at a surface of the wafer; and a reverse reaction member configured to generate the raw material gas by causing the by-product gas to react in the chamber.
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申请公布号 |
US8497217(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US201113151081 |
申请日期 |
2011.06.01 |
申请人 |
ITO TAKAHIRO;NAKASHIMA KENJI;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
ITO TAKAHIRO;NAKASHIMA KENJI |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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