发明名称 Film forming apparatus and film-forming method
摘要 A film forming apparatus and a film forming method for suppressing a drop in the film forming speed caused by-product gas are provided. A film forming apparatus for forming a film on a wafer includes a chamber in which the wafer is located; a gas introducing member configured to introduce raw material gas into the chamber, in which the raw material gas turning into by-product gas and a substance which adheres to the surface of the wafer by reacting at a surface of the wafer; and a reverse reaction member configured to generate the raw material gas by causing the by-product gas to react in the chamber.
申请公布号 US8497217(B2) 申请公布日期 2013.07.30
申请号 US201113151081 申请日期 2011.06.01
申请人 ITO TAKAHIRO;NAKASHIMA KENJI;TOYOTA JIDOSHA KABUSHIKI KAISHA 发明人 ITO TAKAHIRO;NAKASHIMA KENJI
分类号 H01L21/205 主分类号 H01L21/205
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