发明名称 |
Multilayered photodiode and method of manufacturing the same |
摘要 |
In a multilayered photodiode and a method of manufacturing the same, the multilayered photodiode comprises: a transparent substrate; a gate insulating film formed on the transparent substrate; a first metal layer formed on the gate insulating film; a semiconductor layer formed on the first metal layer so as to be in contact with the first metal layer; and a second metal layer formed on the semiconductor layer so as to be in contact with the semiconductor layer. The photodiode is vertically multilayered, and has a metal-insulator-metal (MIM) structure in which a P-N region is replaced by a metal, and in which a light-receiving region does not block incident light.
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申请公布号 |
US8497535(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US201113224440 |
申请日期 |
2011.09.02 |
申请人 |
LEE DONG-BEOM;CHOI DEOK-YOUNG;NOH DAE-HYUN;PARK YONG-SUNG;LEE WON-KYU;SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE DONG-BEOM;CHOI DEOK-YOUNG;NOH DAE-HYUN;PARK YONG-SUNG;LEE WON-KYU |
分类号 |
H01L31/0224 |
主分类号 |
H01L31/0224 |
代理机构 |
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