发明名称 |
Semiconductor devices with active semiconductor height variation |
摘要 |
A semiconductor product has different active thicknesses of silicon on a single semiconductor substrate. The thickness of the silicon layer is changed either by selectively adding silicon or subtracting silicon from an original layer of silicon. The different active thicknesses are suitable for use in different types of devices, such as diodes and transistors.
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申请公布号 |
US8497556(B2) |
申请公布日期 |
2013.07.30 |
申请号 |
US201213607023 |
申请日期 |
2012.09.07 |
申请人 |
BROWN DAVID E.;VAN MEER HANS;SUN SEY-PING;ADVANCED MICRO DEVICES, INC. |
发明人 |
BROWN DAVID E.;VAN MEER HANS;SUN SEY-PING |
分类号 |
H01L31/119 |
主分类号 |
H01L31/119 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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