| 摘要 |
There are provided a microwave plasma source and a plasma processing apparatus capable of improving uniformity of a plasma density distribution within a processing chamber by controlling positions of nodes and antinodes of a standing wave of microwave within the processing chamber not to be fixed. The microwave plasma source 2 includes a microwave supply unit 40. The microwave supply unit 40 includes multiple microwave introducing devices 43 each introducing microwave into the processing chamber; and multiple phase controllers 46 for adjusting phases of the microwaves inputted to the microwave introducing devices 43. Here, the phases of the microwaves inputted to the microwave introducing devices 43 are adjusted by fixing an input phase of the microwave inputted to one of two adjacent microwave introducing devices 43 while varying an input phase of the microwave inputted to the other microwave introducing device 43 according to a periodic waveform. |
