发明名称 PROCESSING METHOD FOR WAFER
摘要 A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.
申请公布号 US2013189806(A1) 申请公布日期 2013.07.25
申请号 US201213541191 申请日期 2012.07.03
申请人 HOSHINO HITOSHI;DISCO CORPORATION 发明人 HOSHINO HITOSHI
分类号 H01L33/60 主分类号 H01L33/60
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