发明名称 |
METHOD OF PRODUCING INSULATION TRENCHES IN A SEMICONDUCTOR ON INSULATOR SUBSTRATE |
摘要 |
A method for producing one or plural trenches in a device comprising a substrate of the semiconductor on insulator type formed by a semiconductive support layer, an insulating layer resting on the support layer and a semiconductive layer resting on said insulating layer, the method comprising steps of: a) localised doping of a given portion of said insulating layer through an opening in a masking layer resting on the fine semiconductive layer, b) selective removal of said given doped area at the bottom of said opening. |
申请公布号 |
US2013189825(A1) |
申请公布日期 |
2013.07.25 |
申请号 |
US201213555356 |
申请日期 |
2012.07.23 |
申请人 |
LE TIEC YANNICK;GRENOUILLET LAURENT;VINET MAUD;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT. |
发明人 |
LE TIEC YANNICK;GRENOUILLET LAURENT;VINET MAUD |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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