发明名称 SPUTTERING APPARATUS AND METHOD FOR FORMING INSULATING FILM
摘要 PROBLEM TO BE SOLVED: To provide a sputtering apparatus and a method for forming an insulating film which can increase a deposition rate of the insulating film and improve film thickness distribution by controlling electrical interference between targets.SOLUTION: The sputtering apparatus 10 includes: a vacuum chamber 11; a plurality of targets of insulation 21-21which are aligned in the same plane in the vacuum chamber 11 and whose sputtering surfaces are oriented in the same direction; and a power supply part 15 which applies AC voltage of the same periodicity to respective targets, wherein sputtered particles sputtered from the respective sputtering surfaces reach substrates 30a-30d opposed to the respective sputtering surfaces. The sputtering apparatus 10 includes a phase difference determination part 17 which determines the phase difference among the targets 21-21of the AC voltage applied to the respective targets 21-21, and is structured so that the power supply part 15 applies the AC voltage to the respective targets 21-21according to the phase difference determined by the phase difference determination part 17.
申请公布号 JP2013144840(A) 申请公布日期 2013.07.25
申请号 JP20120006481 申请日期 2012.01.16
申请人 ULVAC JAPAN LTD 发明人 HASHIMOTO TEPPEI;HIROSE MITSUTAKA;SASAKI SHUNSUKE;ASAKAWA KEIICHIRO;JINBO TAKETO;SU HIROTSUNA
分类号 C23C14/34 主分类号 C23C14/34
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