METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, AND ACTIVE OPERATING DISPLAY DEVICE AND ACTIVE OPERATING SENSOR DEVICE USING SAME

摘要

The present invention relates to a method for manufacturing an oxide semiconductor thin film transistor, and to an active operating display device and an active operating sensor device using same. A method for manufacturing an oxide semiconductor thin film transistor according to the present invention comprises: a first step of depositing and patterning a gate layer on a substrate so as to form a gate electrode; a second step of sequentially depositing a gate insulation film, an oxide semiconductor and an etch stopper on the gate electrode; a third step of patterning the oxide semiconductor; a fourth step of forming a source electrode and a drain electrode on the patterned oxide semiconductor; and a fifth step of depositing a protective layer on the source electrode and the drain electrode, and forming a contact hole in the protective layer, wherein the oxide semiconductor has a thickness of 4nm or less.