| 摘要 |
Embodiments of the present invention generally provide methods and apparatus for improving the uniformity of a film deposited on a large-area substrate, particularly for films deposited in a PECVD system. In one embodiment, a plasma-processing chamber is configured to be asymmetrical relative to a substrate in order to compensate for plasma density non-uniformities in the chamber caused by unwanted magnetic fields. In another embodiment, a plasma-processing chamber is adapted to create a neutral current bypass path that reduces electric current flow through a magnetic field-generating feature in the chamber. In another embodiment, a method is provided for depositing a uniform film on a large-area substrate in a plasma-processing chamber. The chamber is made electrically symmetric during processing by creating a neutral current bypass path, wherein the neutral current bypass path substantially reduces neutral current flow through a magnetic field-generating feature in the chamber. ® KIPO & WIPO 2009
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