| 摘要 |
Disclosed is an electromagnetic casting method of a silicon ingot in which a polycrystalline silicon ingot is continuously cast by charging silicon raw materials into a bottomless cold copper mold, melting the charged silicon raw materials through electromagnetic induction, pulling down to solidify the molten silicon, in which the length of a part of copper mold positioned below a lower end of an induction coil surrounding the copper mold is set to more than 40 mm and 180 mm or less. According to this method, a copper contamination of a silicon ingot incurred by a copper cold mold can be suppressed to produce a silicon ingot which is suitable as a starting material of the substrate of a solar cell. |
