发明名称 |
Schottky gate field effect transistor with high output characteristic |
摘要 |
In a field effect transistor, there are provided a gate electrode on a Schottky layer over an InP channel layer over the substrate, and a field control electrode extending over an insulating layer and separated from the Schottky layer and being positioned between the gate electrode and the drain electrode for controlling an expansion of a space charge region in the channel layer.
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申请公布号 |
US2002171096(A1) |
申请公布日期 |
2002.11.21 |
申请号 |
US20020147089 |
申请日期 |
2002.05.17 |
申请人 |
NEC CORPORATION |
发明人 |
WAKEJIMA AKIO;OTA KAZUKI;MATSUNAGA KOHJI;CONTRATA WALTER;KUZUHARA MASAAKI |
分类号 |
H01L29/43;H01L21/28;H01L21/338;H01L29/06;H01L29/40;H01L29/423;H01L29/47;H01L29/812;H01L29/872;(IPC1-7):H01L29/80 |
主分类号 |
H01L29/43 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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