METHOD AND DEVICE FOR CONVERTING X-RAYS USING A DIRECTLY-CONVERTING SEMICONDUCTOR LAYER

摘要

PURPOSE: A method and a device for converting X-rays using a directly-converting semiconductor layer are provided to reduce a detector drift caused by a polarization effect in the semiconductor layer of an X-ray detector. CONSTITUTION: X-rays are irradiated to a semiconductor layer (4) through a surface (6). The semiconductor layer is irradiated with infrared radiation (3) parallel to the surface through one or more boundary surfaces among lateral boundary surfaces (7). The intensity profile of the infrared radiation is set so that the intensity of the infrared radiation is decreased from the surface over the thickness of the semiconductor layer.