发明名称 GROWING APPARATUS FOR SINGLE CRYSTAL
摘要 PURPOSE: A single crystal growth apparatus is provided to prevent contamination of a thermal insulator by arranging an inner furnace within an outer furnace and growing a single crystal ingot. CONSTITUTION: An outer furnace (100) has an internal space. An inner furnace (200) is arranged inside of the outer furnace. The inner furnace has an internal space accommodating a raw material (A). A thermal insulator (600) is arranged in the outer side of the outer furnace. A seed crystal holder (400) is arranged in an upper side of the furnace and fixes a seed crystal (300).
申请公布号 KR20130083654(A) 申请公布日期 2013.07.23
申请号 KR20120004396 申请日期 2012.01.13
申请人 DONG-EUI UNIVERSITY INDUSTRY-ACADEMIC COOPERATIONFOUNDATION 发明人 LEE, WON JAE;LEE, HEE TAE
分类号 C30B23/00;C30B29/36;H01L21/205 主分类号 C30B23/00
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