发明名称 |
GROWING APPARATUS FOR SINGLE CRYSTAL |
摘要 |
PURPOSE: A single crystal growth apparatus is provided to prevent contamination of a thermal insulator by arranging an inner furnace within an outer furnace and growing a single crystal ingot. CONSTITUTION: An outer furnace (100) has an internal space. An inner furnace (200) is arranged inside of the outer furnace. The inner furnace has an internal space accommodating a raw material (A). A thermal insulator (600) is arranged in the outer side of the outer furnace. A seed crystal holder (400) is arranged in an upper side of the furnace and fixes a seed crystal (300).
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申请公布号 |
KR20130083654(A) |
申请公布日期 |
2013.07.23 |
申请号 |
KR20120004396 |
申请日期 |
2012.01.13 |
申请人 |
DONG-EUI UNIVERSITY INDUSTRY-ACADEMIC COOPERATIONFOUNDATION |
发明人 |
LEE, WON JAE;LEE, HEE TAE |
分类号 |
C30B23/00;C30B29/36;H01L21/205 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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