发明名称 |
Implementing eFuse circuit with enhanced eFuse blow operation |
摘要 |
A method and an eFuse circuit for implementing with enhanced eFuse blow operation without requiring a separate high current and high voltage supply to blow the eFuse, and a design structure on which the subject circuit resides are provided. The eFuse circuit includes an eFuse connected to a field effect transistor (FET) operatively controlled during a sense mode and a blow mode for sensing and blowing the eFuse. The eFuse circuit is placed over an independently voltage controlled silicon region. During a sense mode, the independently voltage controlled silicon region is grounded providing an increased threshold voltage of the FET. During a blow mode, the independently voltage controlled silicon region is charged to a voltage supply potential. The threshold voltage of the FET is reduced by the charged independently voltage controlled silicon region for providing enhanced FET blow function.
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申请公布号 |
US8492207(B2) |
申请公布日期 |
2013.07.23 |
申请号 |
US201113091259 |
申请日期 |
2011.04.21 |
申请人 |
ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS, II JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ERICKSON KARL R.;PAONE PHIL C.;PAULSEN DAVID P.;SHEETS, II JOHN E.;UHLMANN GREGORY J.;WILLIAMS KELLY L. |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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