| 摘要 |
A chip package comprising a glass substrate, wherein a first opening in the glass substrate passes vertically through the glass substrate, a semiconductor chip, a wiring structure comprising a first portion in the first opening and a second portion over the glass substrate, wherein the first portion is connected to the semiconductor chip, wherein the wiring structure comprises a passive device, wherein the wiring structure comprises copper, and a dielectric layer over the glass substrate and on the wiring structure, wherein a second opening in the dielectric layer is over a contact point of the wiring structure, and the contact point is at a bottom of the second opening.
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