| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leakage current between a charge storage layer and a control gate electrode film.SOLUTION: A semiconductor device of a present embodiment comprises: a semiconductor substrate; a memory cell region provided on the semiconductor substrate, in which a plurality of memory cells are formed; and a gate electrode which is formed in the memory cell region via a gate insulation film, and in which a charge storage layer, an interelectrode insulation film and a control gate electrode film are stacked. The gate electrode in the memory cell region is formed such that a cavity is formed between a top face of the charge storage layer and the interelectrode film. |
