| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method that reduces a running cost and also can uniformly etch a substrate, and to provide a substrate treatment apparatus.SOLUTION: The substrate treatment method comprises supplying a solvent vapor (IPA vapor or DIW vapor) containing a solvent substance in which hydrogen fluoride can be dissolved, to a surface of a substrate. Thereby, the surface of the substrate is covered with a liquid film containing the solvent substance. Then, an etching vapor containing hydrogen fluoride is supplied to the surface of the substrate, which is covered with the liquid film containing the solvent substance. Accordingly, the surface of the substrate is etched. |
