| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of contact formation of a fine pattern of a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: forming a first side wall film 80 in first and second regions 100 and 200; forming a second sacrificial layer 72 covering the first side wall film 80 in the region 200 so that the second sacrificial layer projects from on a side face of the first side wall film 80 to both sides, and forming a third sacrificial layer 74 which has a second width LIb on a side face of the first side wall film 80 having a second width; and forming second and third side wall films 82A and 82B having widths LWb and LWc in the region 100 at first intervals LIb, LIc and LId corresponding to the second width adjacently to the first side wall film 80 respectively across the sacrificial layer 74 and in the region 200 at a second interval Dx larger than the first intervals LIb, LIc, and LId adjacently to the first side wall film 80 across the sacrificial layers 72 and 74. |
