发明名称 SEMICONDUCTOR SUBSTRATE, PHOTOELECTRIC CONVERSION DEVICE, AND SEMICONDUCTOR SUBSTRATE SURFACE TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To provide: a semiconductor substrate with a textured structure and reduced reflectance; and a photoelectric conversion device utilizing the semiconductor substrate with reduced reflectance.SOLUTION: A semiconductor substrate has a first face provided with a plurality of convex structures. The average surface roughness of the first face is from 10 nm to 25 nm inclusive. The maximum height difference among the plurality of convex structures is from 350 nm to 500 nm inclusive. In the first face, the percentage of the convex structures not higher than the half maximum height is from 20% to 60% inclusive of the all convex structures provided in the first face. In the semiconductor substrate, the reflectance on the first face in the wavelength region from 400 nm to 1000 nm inclusive is 2% or less.
申请公布号 JP2013143433(A) 申请公布日期 2013.07.22
申请号 JP20120002197 申请日期 2012.01.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 SASAGAWA SHINYA;TAGUCHI FUMIKA;HIROSE TAKASHI
分类号 H01L21/3065;H01L31/04 主分类号 H01L21/3065
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