发明名称 MANUFACTURING METHOD FOR SILICON-CONTAINING FILM AND MANUFACTURING METHOD FOR PHOTOELECTRIC CONVERSION DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon-containing film on a substrate without causing film peeling.SOLUTION: A manufacturing method for a silicon-containing film comprises: a first step of dry-cleaning the inside of a chamber using fluorine-containing gas; a second step of carrying a substrate into the chamber; a third step of purging the inside of the chamber with the substrate provided in the chamber using silane-based gas; and a fourth step of forming a silicon-containing film on the substrate after the third step.
申请公布号 JP2013143429(A) 申请公布日期 2013.07.22
申请号 JP20120002132 申请日期 2012.01.10
申请人 SHARP CORP 发明人 NASUNO YOSHIYUKI;TOMYO ATSUSHI
分类号 H01L21/205;C23C16/44;H01L31/04 主分类号 H01L21/205
代理机构 代理人
主权项
地址