发明名称 |
MANUFACTURING METHOD FOR SILICON-CONTAINING FILM AND MANUFACTURING METHOD FOR PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon-containing film on a substrate without causing film peeling.SOLUTION: A manufacturing method for a silicon-containing film comprises: a first step of dry-cleaning the inside of a chamber using fluorine-containing gas; a second step of carrying a substrate into the chamber; a third step of purging the inside of the chamber with the substrate provided in the chamber using silane-based gas; and a fourth step of forming a silicon-containing film on the substrate after the third step. |
申请公布号 |
JP2013143429(A) |
申请公布日期 |
2013.07.22 |
申请号 |
JP20120002132 |
申请日期 |
2012.01.10 |
申请人 |
SHARP CORP |
发明人 |
NASUNO YOSHIYUKI;TOMYO ATSUSHI |
分类号 |
H01L21/205;C23C16/44;H01L31/04 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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