发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
According to one embodiment, a method for manufacturing a semiconductor device includes implanting impurity ions to a semiconductor layer in which an electrode is embedded; forming a light absorption film which absorbs laser light at a side of the electrode to which the laser light is irradiated; and activating the impurity ions by irradiating laser light to the semiconductor layer at which the light absorption film is formed in the forming.
|
申请公布号 |
US2013183792(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
US201213525616 |
申请日期 |
2012.06.18 |
申请人 |
KUDO TOMOYASU;YOSHINO KENICHI;KAMIMURA MASAKI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUDO TOMOYASU;YOSHINO KENICHI;KAMIMURA MASAKI |
分类号 |
H01L31/0232;H01L31/02 |
主分类号 |
H01L31/0232 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|