发明名称 10T SRAM CELL WITH NEAR DUAL PORT FUNCTIONALITY
摘要 An integrated circuit including an array of SRAM cells containing a write port with a write word line and two read buffers with read word lines. The write port includes passgate transistors connected to each data node of the SRAM cell. A process of operating the integrated circuit in which source nodes of read buffer driver transistors are biased during a read operation. A process of operating the integrated circuit in which source nodes of read buffer driver transistors are floated during a read operation. A process of operating the integrated circuit in which the write port and the read ports share data lines and the source nodes of read buffer driver transistors are floated during a write operation.
申请公布号 US2013182492(A1) 申请公布日期 2013.07.18
申请号 US201313783874 申请日期 2013.03.04
申请人 TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS INCORPORATED 发明人 HOUSTON THEODORE W.
分类号 G11C11/419 主分类号 G11C11/419
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