发明名称 |
METHOD OF DEPOSITING A SILICON GERMANIUM TIN LAYER ON A SUBSTRATE |
摘要 |
<p>Methods of depositing silicon germanium tin (SiGeSn) layer on a substrate are disclosed herein. In some embodiments, a method may include co-flowing a silicon source, a germanium source, and a tin source comprising a tin halide to a process chamber at a temperature of about 450 degrees Celsius or below and a pressure of about 100 Torr or below to deposit the SiGeSn layer on a first surface of the substrate. In some embodiments, the tin halide comprises tin tetrachloride (SnCl4).</p> |
申请公布号 |
WO2013106408(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
WO2013US20801 |
申请日期 |
2013.01.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
HUANG, YI-CHIAU;SANCHEZ, ERROL ANTONIO C. |
分类号 |
H01L21/31;H01L21/336;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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