METHOD FOR MANUFACTURING SILICON WAFER

摘要

PURPOSE: A method for manufacturing a silicon wafer is provided to simplify manufacturing processes by removing a low temperature process to grow a thermal donor to an extract core of a BMD. CONSTITUTION: A V/G is controlled to form an area without a point defect under an inert gas atmosphere with hydrogen gases by a Czochralski method. A silicon single crystal is grown. A silicon wafer is formed by cutting the grown silicon single crystal. The silicon wafer is planarized and polished. The silicon wafer is maintained under an oxidizing gas atmosphere at 1250 to 1380 degrees centigrade for one to sixty seconds. [Reference numerals] (AA) Inert gas atmosphere; (BB) Oxidizing gas atmosphere; (CC) Temperature (°C); (DD) First RTP; (EE) Second RTP; (FF) Time (second)