| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device that is small in characteristic variation.SOLUTION: A drift layer 32 having a first surface S1 contacting with a single crystal substrate 20 and a second surface S2 on an opposite side to the first surface S1, made of silicon carbide, and having a first conductivity type, is formed on the single crystal substrate 20. A collector layer 30 made of silicon carbide and having a second conductivity type is formed on the second surface S2 of the drift layer 32. The single crystal substrate 20 is removed to expose the first surface S1 of the drift layer 32. A body region 33 located on the first surface S1 of the drift layer 32 and having the second conductivity type different from the first conductivity type, and an emitter region 34 located on the body region 33 so as to be separated from the drift layer 32 by the body region 33 and having the first conductivity type, are formed. |
