| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a silicon single crystal, wherein a dislocation-free silicon single crystal can be obtained without conducting a dash necking method by reliably preventing a heat-shock dislocation from occurring in a seed crystal while responding to each change of a single crystal-growing environment.SOLUTION: A method of producing silicon single crystal includes: a step (a) of arranging a first seed crystal 50A having a cylindrical or prismatic shape above a silicon melt 16, followed by a step (b) of immersing the first seed crystal 50A to a predetermined position of the seed crystal; a step (c) of adjusting a temperature of the silicon melt 16 to a temperature at which a crystal habit line 70 can be confirmed in a contact interface between the immersed first seed crystal 50A and the silicon melt 16, while detecting a shape of the contact interface by using an imaging means 60; and steps (d) to (h) of recovering the first seed crystal 50A, adjusting again the temperature of the silicon melt 16 to the temperature higher by 10 to 18°C than the temperature thus adjusted in the preceding step, and growing the silicon single crystal without conducting a dash necking method at the temperature thus adjusted again by using a second seed crystal 50B. |
