| 摘要 |
PROBLEM TO BE SOLVED: To inhibit warp of a substrate to increase surface smoothness, and inhibit stress applied to a bonding part of a chip and a substrate caused by a difference in thermal expansion coefficients of first and second underfill resins.SOLUTION: A semiconductor device comprises: a substrate 1; a semiconductor chip 2 connected to one surface of the substrate 1 via a plurality of bumps 3, in which an element formation surface is opposite to the one surface; and an underfill resin 6 filled between the element formation surface of the semiconductor chip 2 and the one surface of the substrate 1. The underfill resin 6 includes a first underfill resin 4 which is formed in an arranged region of multiple bumps 3a arranged on an outermost periphery among the plurality of bumps 3 and inside the arranged region, and a second underfill resin 5 which is formed outside the first underfill resin 4. A thermal expansion coefficient of the substrate 1 is larger than a thermal expansion coefficient of the first underfill resin 4. A thermal expansion coefficient of the second underfill resin 5 is larger than the thermal expansion coefficient of the first underfill resin 4. |
