发明名称 |
DI-T-BUTOXYDIACETOXYSILANE-BASED SILSESQUIOXANE RESINS AS HARD-MASK ANTIREFLECTIVE COATING MATERIAL AND METHOD OF MAKING |
摘要 |
<p>A method of preparing a DIABS-based silsesquioxane resin for use in an antireflective hard-mask coating for photolithography is provided. Methods of preparing an antireflective coating from the DIABS-based silsesquioxane resin and using said antireflective coating in photolithography is alternatively presented. The DIABS-based silsequioxane resin has structural units formed from the hydrolysis and condensation of silane monomers including di-t-butoxydiacetoxysilane (DIABS) and at least one selected from the group of R1SiX3, R2SiX3, R3SiX3, and SiX4 with water; wherein R1is H or an alkyl group, X is a halide or an alkoxy group, R2 is a chromophore moiety, and R3 is a reactive site or crosslinking site. The DIABS-based silsesqioxane resin is characterized by the presence of at least one tetra-functional SiO4/2 unit formed via the hydrolysis of di-t-butoxydiacetoxysilane (DIABS).</p> |
申请公布号 |
WO2013106298(A1) |
申请公布日期 |
2013.07.18 |
申请号 |
WO2013US20617 |
申请日期 |
2013.01.08 |
申请人 |
DOW CORNING CORPORATION |
发明人 |
FU, PENG-FEI;MOYER, ERIC, S.;SUHR, JASON |
分类号 |
C08G77/04;C09D183/04;H01L21/312 |
主分类号 |
C08G77/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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