| 摘要 |
A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) ( 100 ) including a semiconductor substrate ( 110 ) having a first conductivity type and buried semiconductor region ( 115 ) having a second conductivity type located above the semiconductor substrate. The IGBT further includes a plurality of first semiconductor regions ( 120 ) having the first conductivity type, a plurality of second semiconductor regions ( 130 ) having the first conductivity type, and a plurality of third semiconductor regions ( 140 ) having the second conductivity type. A sinker region ( 142 ) having the second conductivity type is disposed in a third semiconductor region and a first semiconductor region during manufacture to define the plurality of regions and tie the buried semiconductor region to the plurality of third semiconductor regions. An emitter ( 150 ) having the first conductivity type is disposed in one of the third semiconductor regions, a collector ( 170 ) having the first conductivity type is disposed in the other of the third semiconductor regions. A field poly plate ( 162 ) is provided and tied to the collector ( 170 ). In a particular embodiment, the plurality of third semiconductor regions and the buried semiconductor region deplete the plurality of first semiconductor regions in response to a reverse bias potential applied between the plurality of second semiconductor regions and the plurality of third semiconductor regions. |
