发明名称 |
Method of growing carbon nanotubes laterally, and lateral interconnections and field effect transistor using the same |
摘要 |
<p>Provided are a method of growing carbon nanotubes laterally, including forming catalyst dots to grow carbon nanotubes on a substrate, forming a sacrificial layer including a plurality of nanochannels including regions having the catalyst dots formed therein, and growing carbon nanotubes through the nanochannels, and a field effect transistor using the method.</p> |
申请公布号 |
EP2615062(A2) |
申请公布日期 |
2013.07.17 |
申请号 |
EP20120158392 |
申请日期 |
2012.03.07 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION AT NAMSEOUL UNIVERSITY |
发明人 |
LEE, SUN-WOO;LEE, BOONG-JOO |
分类号 |
C01B31/02;H01L51/00;H01L51/30 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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