发明名称 Method of growing carbon nanotubes laterally, and lateral interconnections and field effect transistor using the same
摘要 <p>Provided are a method of growing carbon nanotubes laterally, including forming catalyst dots to grow carbon nanotubes on a substrate, forming a sacrificial layer including a plurality of nanochannels including regions having the catalyst dots formed therein, and growing carbon nanotubes through the nanochannels, and a field effect transistor using the method.</p>
申请公布号 EP2615062(A2) 申请公布日期 2013.07.17
申请号 EP20120158392 申请日期 2012.03.07
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION AT NAMSEOUL UNIVERSITY 发明人 LEE, SUN-WOO;LEE, BOONG-JOO
分类号 C01B31/02;H01L51/00;H01L51/30 主分类号 C01B31/02
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