| 摘要 |
<p>A semiconductor device having an active element and an MIM capacitor and a structure capable of reducing the number of the manufacturing steps thereof and a manufacturing method therefor are provided. The semiconductor device has a structure that the active element having an ohmic electrode and the MIM capacitor having a dielectric layer arranged between a lower electrode and an upper electrode are formed on a semiconductor substrate, wherein the lower electrode and ohmic electrode have the same structure.</p> |
