| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof provide a smart power integrated circuit with trench double diffused metal-oxide-semiconductor (TDMOS) power device, thereby improving current driving capacity. CONSTITUTION: An insulating layer is interposed between a lower plate (10) and an upper plate (20). An isolation pattern isolates a first device and a second device. A doping pattern is interposed between the upper plate and the insulating layer; the upper plate and an epi layer (14). The first device is electrically connected with the lower plate through the doping pattern and epi layer. The second device is electrically isolated from the lower plate through the doping pattern and insulating layer.
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