发明名称 Manufacturing method of composite poly-silicon substrate of solar cell
摘要 <p>A manufacturing method of a composite poly-silicon substrate of solar cells includes the following steps: providing a first substrate layer having a purity ranging from 2N to 3N; and forming a second substrate layer on the first substrate layer, where the purity of the second substrate layer ranges from 6N to 9N.</p>
申请公布号 EP2615627(A1) 申请公布日期 2013.07.17
申请号 EP20120150753 申请日期 2012.01.11
申请人 INNOVATION & INFINITY GLOBAL CORP. 发明人 CHU, CHAO-CIEH
分类号 H01L21/02 主分类号 H01L21/02
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