发明名称 |
A FIN-FET NON-VOLATILE MEMORY CELL, AND AN ARRAY AND METHOD OF MANUFACTURING |
摘要 |
<p>A non-volatile memory cell has a substrate layer with a fin shaped semiconductor member of a first conductivity type on the substrate layer. The fin shaped member has a first region of a second conductivity type and a second region of the second conductivity type, spaced apart from the first region with a channel region extending between the first region and the second region. The fin shaped member has a top surface and two side surfaces between the first region and the second region. A word line is adjacent to the first region and is capacitively coupled to the top surface and the two side surfaces of a first portion of the channel region. A floating gate is adjacent to the word line and is insulated from the top surface and is capacitively coupled to the two side surfaces of a second portion of the channel region. A coupling gate is capacitively coupled to the floating gate. An erase gate is insulated from the second region and is adjacent to the floating gate and coupling gate.</p> |
申请公布号 |
EP2476138(A4) |
申请公布日期 |
2013.07.17 |
申请号 |
EP20100815914 |
申请日期 |
2010.08.31 |
申请人 |
SILICON STORAGE TECHNOLOGY INC. |
发明人 |
HU, YAW, WEN;TUNTASOOD, PRATEEP |
分类号 |
H01L29/423;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L29/78;H01L29/788 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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