发明名称 METHOD FOR PRODUCING A SEMICONDUCTOR CHIP EMITTING RADIATION, SEMICONDUCTOR CHIP EMITTING RADIATION, AND COMPONENT EMITTING RADIATION
摘要 <p>A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.</p>
申请公布号 KR20130081321(A) 申请公布日期 2013.07.16
申请号 KR20137016511 申请日期 2011.11.23
申请人 OSRAM OPTO SEMICONDUCTORS GMBH 发明人 PETERSEN KIRSTIN;BAUMANN FRANK;EISERT DOMINIK;CUI HAILING
分类号 H01L33/50;H01L33/48 主分类号 H01L33/50
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