发明名称 |
Interconnects with improved electromigration reliability |
摘要 |
An interconnect structure in a semiconductor device may be formed to include a number of segments. Each segment may include a first metal. A barrier structure may be located between the plurality of segments to enable the interconnect structure to avoid electromigration problems.
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申请公布号 |
US8486767(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US201113166988 |
申请日期 |
2011.06.23 |
申请人 |
ZHAI JUN;WANG FEI;ADVANCED MICRO DEVICES, INC. |
发明人 |
ZHAI JUN;WANG FEI |
分类号 |
H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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