发明名称 |
SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same |
摘要 |
Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
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申请公布号 |
US8487373(B2) |
申请公布日期 |
2013.07.16 |
申请号 |
US20090432441 |
申请日期 |
2009.04.29 |
申请人 |
FANG SHENQING;XUE GANG;LI WENMEI;KANG INKUK;SPANION LLC |
发明人 |
FANG SHENQING;XUE GANG;LI WENMEI;KANG INKUK |
分类号 |
H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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