发明名称 Multi-port memory device
摘要 A multi-port memory device includes: a bank having a plurality of matrices; a plurality of test data input/output units where data is input/output using a test mode for detecting a defective memory cell; a plurality of ports converted into a decoding device for decoding a command/address at the test mode; a plurality of data transfer lines for transferring data between the matrices and the test data I/O units, wherein the data transfer lines is grouped into the number of matrices; and a plurality of temporary storing units included between the data transfer lines and the matrices for temporarily storing data.
申请公布号 US8488400(B2) 申请公布日期 2013.07.16
申请号 US20100886957 申请日期 2010.09.21
申请人 HUR HWANG;HYNIX SEMICONDUCTOR INC. 发明人 HUR HWANG
分类号 G11C29/00;G11C7/10;G11C8/16 主分类号 G11C29/00
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